SEMICONDUCTOR BASED MCQ
Q1.Which of the following elements is most frequently used for doping pure Ge or Si?
(A) Boron
(B) Gallium
(C) Indium
(D) All of the above
Q2.In “p” type material, minority carriers would be:
(A) Slower
(B) Dopants
(C) Holes
(D) Electrons
Q3. Intrinsic semiconductor material is characterized by a valence shell of how many electrons?
(A) 1
(B) 2
(C) 4
(D) 5
Q4. A semiconductor is formed by ……… bonds.
(A) Covalent
(B) Electrovalent
(C) Co-ordinate
(D) None of the above
Q5. The most commonly used semiconductor is ?
(A) Germanium
(B) Silicon
(C) Carbon
(D) Sulphur
Q6. n-type semiconductors are:
(A) Negatively charged
(B) Produced when Indium is added as an impurity to Germanium
(C) Produced when phosphorous is added as an impurity to Silicon
(D) None of the above
Q7. Electronic distribution of an Si atom is
(A) 2, 10, 2
(B) 2, 8, 4
(C) 2, 7, 5
(D) 2, 4, 8.
Q8. Major part of the current in an intrinsic semiconductor is due to
(A) conduction-band electrons
(B) valence-band electrons
(C) holes in the valence band
(D) thermally-generated electron.
Q9.The impure semiconductors which conduct due to charge carriers created or donated by impurity elements are known as ?
(A) Intrinsic semiconductor
(B) Extrinsic semiconducotor
(C) Insulator
(D) None of the above
Q10. At absolute zero(0K), all intrinsic semiconducors acts as ?
(A) Non metal
(B) Metal
(C) Insulator
(D) None of the above
Q11. When arsenic is added as an impurity to silicon, the resulting material is?
(A) n-type semiconductor
(B) p-type semiconductor
(C) n-type conductor
(D) Insulator
Q12. To obtain a p-type germanium semiconductor,it must be doped with ?
(A) arsenic
(B) antimony
(C) indium
(D) phosphorus
Q12. Due to Doping in a semi conductor, increases its ?
(A) Resistivity
(B) Indutance
(C) Conductivity
(D) None of the above
Q13. Majority carriers in n-type semiconductor are ?
(A) Hole
(B) Electron
(C) Photon
(D) All of the above
Q14. Minority carriers in n-type semiconductor are ?
(A) Electron
(B) Hole
(C) Photon
(D) None of the above
Q15. Majority carrier in p-type semiconductor are ?
(A) Electron
(B) Hole
(C) Photon
(D) None of the above
Q16. Minority carrier in p-type semiconductor are ?
(A) Electron
(B) Hole
(C) Photon
(D) All of the above
Q17. In n-type semiconductor ?
(A) Number of electron is less than the number of holes (n<p)
(B) Number of electron is greater than the number of holes (n>p)
(C) Number of electron is equal to the number of holes (n=p)
(D) None of the above
Q18. In p-type semiconductor ?
(A) Number of electron is less than the number of holes (n<p)
(B) Number of electron is greater than the number of holes (n>p)
(C) Number of electron is equal to the number of holes (n=p)
(D) None of the above
Q19.In intrinsic semiconductors ?
(A) Number of electron is less than the number of holes (n<p)
(B) Number of electron is greater than the number of holes (n>p)
(C) Number of electron is equal to the number of holes (n=p)
(D) None of the above
Q20.Which one is not a trivalent impurity(acceptor) ?
(A) Boron (B)
(B) Aluminium (Al)
(C) Gallium (Ga)
(D) Arsenic (As)
Q21.Which one is not a pentavalent impurity(donor) ?
(A) Phosphorous(P)
(B) Antimony(Sb)
(C) Bismuth(Bi)
(D) Indium(In)
Q22.Valency of impurity atom that is to be added to be Germanium crystal so as to make a p-type semiconductor ?
(A) 1
(B) 3
(C) 5
(D) All of the above
Q23. An n-type and p-type semiconductor can be obtained by doping pure silicon with
(A) Sodium and magnesium respectively
(B) Phosphorous and Boron respectively
(C) Indium and sodium respectively
(D) Boron and Arsenic respectively
Q24.Which one is not a semiconductor?
(A) Silicon
(B) Germanium
(C) Galium nitride
(D) Galium arsenide
Q25. Most widely used semiconductor material in electronics device is
(A) Silicon
(B) Carbon
(C) Gemanium
(D) All of the above
